Cross-loop antenna

ABSTRACT

An antenna is provided. This antenna is contained within a package that is secured to an IC (which allows radiation to propagated away for a printed circuit board so as to reduce interference), and this antenna includes two loop antennas that are shorted to ground and that “overlap” and includes a “via wall.” With this configuration, circular polarization can be achieved by varying the relative phases of the input signals, and the “via wall” improves efficiency by reducing surface waves.

TECHNICAL FIELD

The invention relates generally to a loop antenna and, moreparticularly, to a loop antenna for use in the terahertz frequencyrange.

BACKGROUND

Loop antennas have been used in a wide variety of applications over theyears, but, for high frequency applications (i.e., terahertz radiation)and for monolithically integrated antennas, there can be a variety ofbarriers to the use of loops antennas. For example, there can be losesassociated with packaging material between the antenna and transmissionmedia. Another example is losses due to parasitic radiation andinterface from trances in printed circuit boards or PCBs. Therefore,there is a need for an improved system. Some examples of conventionalsystems are: U.S. Pat. No. 7,545,329; and J. Grzyb, D. Liu, U. Pfeiffer,and B. Gaucher, “Wideband cavity-backed folded dipole superstrateantenna for 60 GHz applications,” Proceedings of the 2006 IEEE AP-SInternational Symposium and UNSC/URSI and AMEREM Meetings, pp.3939-3942, Albuquerque, N.M., Jul. 9-14, 2006.

SUMMARY

An embodiment of the present invention, accordingly, provides anapparatus. The apparatus comprises a substrate having a first terminal,a second terminal, third terminal, and a fourth terminal; a firstmetallization layer disposed over the substrate, wherein the firstmetallization layer includes: a first window region; a first conductiveregion disposed over and in electrical contact with the first terminal,wherein the first conductive region is substantially circular, andwherein the first conductive region is located within the first windowregion; a second conductive region disposed over and in electricalcontact with the second terminal, wherein the second conductive regionis substantially circular, and wherein the first conductive region islocated within the first window region; a third conductive regiondisposed over and in electrical contact with the third terminal, whereinthe third conductive region is substantially circular, and wherein thethird conductive region is located within the first window region; and afourth conductive region disposed over and in electrical contact withthe fourth terminal, wherein the fourth conductive region issubstantially circular, and wherein the fourth conductive region islocated within the first window region; a second metallization layerdisposed over the first metallization layer, wherein the secondmetallization layer includes: a second window region that issubstantially aligned with the first window region; a fifth conductiveregion disposed over and in electrical contact with the first conductiveregion, wherein the fifth conductive region is substantially circular,and wherein the fifth conductive region is located within the secondwindow region; a sixth conductive region disposed over and in electricalcontact with the second conductive region, wherein the sixth conductiveregion is substantially circular, and wherein the sixth conductiveregion is located within the second window region; a seventh conductiveregion disposed over and in electrical contact with the third conductiveregion, wherein the seventh conductive region is substantially circular,and wherein the seventh conductive region is located within the secondwindow region; an eighth conductive region disposed over and inelectrical contact with the fourth conductive region, wherein the eighthconductive region is substantially circular, and wherein the fourthconductive region is located within the second window region; and aninth conductive region that extends between and is in electricalcontact with the fifth and eighth conductive regions; and a thirdmetallization layer disposed over the second metallization layer,wherein the third metallization layer includes: a third window regionthat is substantially aligned with the second window region; a tenthconductive region disposed over and in electrical contact with the fifthconductive region, wherein the tenth conductive region is substantiallycircular, and wherein the tenth conductive region is located within thethird window region; an eleventh conductive region disposed over and inelectrical contact with the sixth conductive region, wherein theeleventh conductive region is substantially circular, and wherein theeleventh conductive region is located within the third window region; atwelfth conductive region disposed over and in electrical contact withthe seventh conductive region, wherein the twelfth conductive region issubstantially circular, and wherein the twelfth conductive region islocated within the third window region; a thirteenth conductive regiondisposed over and in electrical contact with the eighth conductiveregion, wherein the thirteenth conductive region is substantiallycircular, and wherein the thirteenth conductive region is located thirdthe second window region; and a fourteenth conductive region thatextends between and is in electrical contact with the eleventh andtwelfth conductive regions, wherein the fourteenth region overlaps theninth region.

In accordance with an embodiment of the present invention, the first,second, and third window regions are substantially rectangular.

In accordance with an embodiment of the present invention, the apparatusfurther comprises: a first set of vias, wherein each via from the firstset of via extends between at least one of the first and fifthconductive regions, the second and sixth conductive regions, the thirdand seventh conductive regions, and the fourth and eighth conductiveregions; and a second set of vias, wherein each via from the second setof via extends between at least one of the tenth and fifth conductiveregions, the eleventh and sixth conductive regions, the twelfth andseventh conductive regions, and the thirteenth and eighth conductiveregions.

In accordance with an embodiment of the present invention, the substratefurther comprises a plurality of border terminals, and wherein the firstmetallization layer further comprises a fifteenth conductive region thatsubstantially surrounds the first window region and is in electricalcontact with the boarder terminals, and wherein the second metallizationlayer further comprises a sixteenth conductive region that substantiallysurrounds the second window region and that is in electrical contactwith the fifteenth conductive region, and wherein the thirdmetallization layer further comprises a seventeenth conductive regionthat substantially surrounds the third window region and that is inelectrical contact with the sixteenth conductive region.

In accordance with an embodiment of the present invention, the apparatusfurther comprises: a third set of vias, wherein each via from the thirdset of vias extends between the fifteenth and sixteenth conductiveregions; and a fourth set of vias, wherein each via from the fourth setof vias extends between the sixteenth and seventeenth conductiveregions.

In accordance with an embodiment of the present invention, the first andsecond terminals are coupled to ground.

In accordance with an embodiment of the present invention, the first,second, third and fourth terminals are stud bumps.

In accordance with an embodiment of the present invention, an apparatusis provided. The apparatus comprises an integrated circuit (IC) having:radio frequency (RF) circuitry; a stud bump that is coupled to the RFcircuitry; a second stud bump that is coupled to the RF circuitry; athird stud bump that is coupled to the RF circuitry and that is coupledto ground; a fourth stud bump that is coupled to the RF circuitry andthat is coupled to ground; and an antenna package having: a dielectriclayer, wherein the first, second, third, and fourth stud bumps extendthrough the dielectric layer; an underfill layer that is disposedbetween the dielectric layer and the IC; a first metallization layerdisposed over the substrate, wherein the first metallization layerincludes: a first window region; a first conductive region disposed overand in electrical contact with the first stud bump, wherein the firstconductive region is substantially circular, and wherein the firstconductive region is located within the first window region; a secondconductive region disposed over and in electrical contact with thesecond stud bump, wherein the second conductive region is substantiallycircular, and wherein the first conductive region is located within thefirst window region; a third conductive region disposed over and inelectrical contact with the third stud bump, wherein the thirdconductive region is substantially circular, and wherein the thirdconductive region is located within the first window region; and afourth conductive region disposed over and in electrical contact withthe fourth stud bump, wherein the fourth conductive region issubstantially circular, and wherein the fourth conductive region islocated within the first window region; a package substrate; a secondmetallization layer disposed over the package substrate, wherein thefirst metallization layer includes: a second window region that issubstantially aligned with the first window region; a fifth conductiveregion disposed over and in electrical contact with the first conductiveregion, wherein the fifth conductive region is substantially circular,and wherein the fifth conductive region is located within the secondwindow region; a sixth conductive region disposed over and in electricalcontact with the second conductive region, wherein the sixth conductiveregion is substantially circular, and wherein the sixth conductiveregion is located within the second window region; a seventh conductiveregion disposed over and in electrical contact with the third conductiveregion, wherein the seventh conductive region is substantially circular,and wherein the seventh conductive region is located within the secondwindow region; and an eighth conductive region disposed over and inelectrical contact with the fourth conductive region, wherein the eighthconductive region is substantially circular, and wherein the eighthconductive region is located within the second window region; a set ofvias, wherein each via from the set of via extends through the packagesubstrate between at least one of the first and fifth conductiveregions, the second and sixth conductive regions, the third and seventhconductive regions, and the fourth and eighth conductive regions; asecond metallization layer disposed over the first metallization layer,wherein the second metallization layer includes: a third window regionthat is substantially aligned with the second window region; a ninthconductive region disposed over and in electrical contact with the fifthconductive region, wherein the ninth conductive region is substantiallycircular, and wherein the ninth conductive region is located within thethird window region; a tenth conductive region disposed over and inelectrical contact with the sixth conductive region, wherein the tenthconductive region is substantially circular, and wherein the tenthconductive region is located within the third window region; an eleventhconductive region disposed over and in electrical contact with theseventh conductive region, wherein the eleventh conductive region issubstantially circular, and wherein the eleventh conductive region islocated within the third window region; a twelfth conductive regiondisposed over and in electrical contact with the eighth conductiveregion, wherein the twelfth conductive region is substantially circular,and wherein the twelfth conductive region is located within the thirdwindow region; and a thirteenth conductive region that extends betweenand is in electrical contact with the ninth and twelfth conductiveregions; and a third metallization layer disposed over the secondmetallization layer, wherein the third metallization layer includes: afourth window region that is substantially aligned with the third windowregion; a fourteenth conductive region disposed over and in electricalcontact with the ninth conductive region, wherein the fourteenthconductive region is substantially circular, and wherein the fourteenthconductive region is located within the fourth window region; afifteenth conductive region disposed over and in electrical contact withthe tenth conductive region, wherein the fifteenth conductive region issubstantially circular, and wherein the fifteenth conductive region islocated within the fourth window region; a sixteenth conductive regiondisposed over and in electrical contact with the eleventh conductiveregion, wherein the sixteenth conductive region is substantiallycircular, and wherein the sixteenth conductive region is located withinthe fourth window region; a seventeenth conductive region disposed overand in electrical contact with the twelfth conductive region, whereinthe sixteenth conductive region is substantially circular, and whereinthe sixteenth conductive region is located third the fourth windowregion; and an eighteenth conductive region that extends between and isin electrical contact with the fifteenth and sixteenth conductiveregions, wherein the eighteenth region overlaps the thirteenth region.

In accordance with an embodiment of the present invention, the first,second, third, and fourth window regions are substantially rectangular.

In accordance with an embodiment of the present invention, the set ofvia further comprises a first set of vias, and wherein the antennapackage further comprises: a second set of vias, wherein each via fromthe second set of via extends between at least one of the ninth andfifth conductive regions, the tenth and sixth conductive regions, theeleventh and seventh conductive regions, and the twelfth and eighthconductive regions; and a third set of vias, wherein each via from thethird set of via extends between at least one of the ninth andfourteenth conductive regions, the tenth and fifteenth conductiveregions, the eleventh and sixteenth conductive regions, and the twelfthand seventeenth conductive regions.

In accordance with an embodiment of the present invention, the ICfurther comprises a plurality of border stud bumps, and wherein thefirst metallization layer further comprises a nineteenth conductiveregion that substantially surrounds the first window region and is inelectrical contact with the boarder stud bumps, and wherein the secondmetallization layer further comprises a twentieth conductive region thatsubstantially surrounds the second window region and that is inelectrical contact with the nineteenth conductive region, and whereinthe third metallization layer further comprises a twenty-firstconductive region that substantially surrounds the third window regionand that is in electrical contact with the twentieth conductive region.

In accordance with an embodiment of the present invention, the antennapackage further comprises: a fourth set of vias, wherein each via fromthe fourth set of vias extends between the nineteenth and twentiethconductive regions; and a fifth set of vias, wherein each via from thefifth set of vias extends between the twentieth and twenty-firstconductive regions.

In accordance with an embodiment of the present invention, the first,second, third, and fourth metallization layers are formed of copper oraluminum, and wherein the dielectric layer is formed of polyimide, andwherein each of the first, second, third, fourth, and border stud bumpsare formed of gold with a gold-nickel plating.

In accordance with an embodiment of the present invention, an apparatusis provided. The apparatus comprises an integrated circuit (IC) having:a plurality of RF transceivers; a plurality of sets of stub bumps,wherein each set of stud bump is associated with at least one of the RFtransceivers, and wherein each set of stud bumps includes: a first studbump that is coupled to its associated RF transceiver; a second studbump that is coupled to its associated RF transceiver; a third stud bumpthat is coupled to its associated RF transceiver and that is coupled toground; and a fourth stud bump that is coupled to its associated RFtransceiver and that is coupled to ground; an antenna package having: adielectric layer, wherein each stud bump from each set of the pluralityof sets of stud bumps extends through the dielectric layer; an underfilllayer that is disposed between the dielectric layer and the IC; apackage substrate; an array of antenna, wherein each antenna isassociated with at least of the RF transceivers, and wherein eachantenna includes: a first metallization layer disposed over thesubstrate, wherein the first metallization layer includes: a firstwindow region; a first conductive region disposed over and in electricalcontact with its associated first stud bump, wherein the firstconductive region is substantially circular, and wherein the firstconductive region is located within the first window region; a secondconductive region disposed over and in electrical contact with itsassociated second stud bump, wherein the second conductive region issubstantially circular, and wherein the first conductive region islocated within the first window region; a third conductive regiondisposed over and in electrical contact with its associated third studbump, wherein the third conductive region is substantially circular, andwherein the third conductive region is located within the first windowregion; and a fourth conductive region disposed over and in electricalcontact with its associated fourth stud bump, wherein the fourthconductive region is substantially circular, and wherein the fourthconductive region is located within the first window region; a secondmetallization layer disposed over the package substrate, wherein thefirst metallization layer includes: a second window region that issubstantially aligned with the first window region; a fifth conductiveregion disposed over and in electrical contact with the first conductiveregion, wherein the fifth conductive region is substantially circular,and wherein the fifth conductive region is located within the secondwindow region; a sixth conductive region disposed over and in electricalcontact with the second conductive region, wherein the sixth conductiveregion is substantially circular, and wherein the sixth conductiveregion is located within the second window region; a seventh conductiveregion disposed over and in electrical contact with the third conductiveregion, wherein the seventh conductive region is substantially circular,and wherein the seventh conductive region is located within the secondwindow region; and an eighth conductive region disposed over and inelectrical contact with the fourth conductive region, wherein the eighthconductive region is substantially circular, and wherein the eighthconductive region is located within the second window region; a set ofvias, wherein each via from the set of via extends through the packagesubstrate between at least one of the first and fifth conductiveregions, the second and sixth conductive regions, the third and seventhconductive regions, and the fourth and eighth conductive regions; asecond metallization layer disposed over the first metallization layer,wherein the second metallization layer includes: a third window regionthat is substantially aligned with the second window region; a ninthconductive region disposed over and in electrical contact with the fifthconductive region, wherein the ninth conductive region is substantiallycircular, and wherein the ninth conductive region is located within thethird window region; a tenth conductive region disposed over and inelectrical contact with the sixth conductive region, wherein the tenthconductive region is substantially circular, and wherein the tenthconductive region is located within the third window region; an eleventhconductive region disposed over and in electrical contact with theseventh conductive region, wherein the eleventh conductive region issubstantially circular, and wherein the eleventh conductive region islocated within the third window region; a twelfth conductive regiondisposed over and in electrical contact with the eighth conductiveregion, wherein the twelfth conductive region is substantially circular,and wherein the twelfth conductive region is located within the thirdwindow region; and a thirteenth conductive region that extends betweenand is in electrical contact with the ninth and twelfth conductiveregions; and a third metallization layer disposed over the secondmetallization layer, wherein the third metallization layer includes: afourth window region that is substantially aligned with the third windowregion; a fourteenth conductive region disposed over and in electricalcontact with the ninth conductive region, wherein the fourteenthconductive region is substantially circular, and wherein the fourteenthconductive region is located within the fourth window region; afifteenth conductive region disposed over and in electrical contact withthe tenth conductive region, wherein the fifteenth conductive region issubstantially circular, and wherein the fifteenth conductive region islocated within the fourth window region; a sixteenth conductive regiondisposed over and in electrical contact with the eleventh conductiveregion, wherein the sixteenth conductive region is substantiallycircular, and wherein the sixteenth conductive region is located withinthe fourth window region; a seventeenth conductive region disposed overand in electrical contact with the twelfth conductive region, whereinthe sixteenth conductive region is substantially circular, and whereinthe sixteenth conductive region is located third the fourth windowregion; and an eighteenth conductive region that extends between and isin electrical contact with the fifteenth and sixteenth conductiveregions, wherein the eighteenth region overlaps the thirteenth region;and a high impedance surface (HIS) disposed on the substrate andsubstantially surrounding the array of antennas.

The foregoing has outlined rather broadly the features and technicaladvantages of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of the invention will be describedhereinafter which form the subject of the claims of the invention. Itshould be appreciated by those skilled in the art that the conceptionand the specific embodiment disclosed may be readily utilized as a basisfor modifying or designing other structures for carrying out the samepurposes of the present invention. It should also be realized by thoseskilled in the art that such equivalent constructions do not depart fromthe spirit and scope of the invention as set forth in the appendedclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a system in accordance with a preferred embodiment of thepresent invention;

FIG. 2 is a plan view of the antenna package of FIG. 1;

FIG. 3 is a plan view of the bottom dielectric layer for an antenna ofFIG. 2;

FIG. 4 is a cross-sectional view of FIG. 2 along section line I-I;

FIGS. 5, 7, 9, and 11 are plan views of the metallization layers for theantenna of FIG. 2;

FIGS. 6, 8, 10, and 12 are a cross-sectional views of FIGS. 5, 7, 9, and11 along section lines II-II, III-III, IV-IV, and V-V, respectively; and

FIG. 13 is a diagram depicting an example of the radiation pattern forthe antenna of FIG. 2.

DETAILED DESCRIPTION

Refer now to the drawings wherein depicted elements are, for the sake ofclarity, not necessarily shown to scale and wherein like or similarelements are designated by the same reference numeral through theseveral views.

Turning to FIG. 1, an example of a system 100 in accordance with anembodiment of the present invention can be seen. This system 100generally comprises a printed circuit board (PCB) 102, an antennapackage 104, and an integrated circuit (IC) 106. The IC 106 generallyincludes radio frequency (RF) circuitry. For example, IC 106 can be aterahertz phased array system that includes multiple transceivers. Anexample of such an IC can be seen in co-pending U.S. patent applicationSer. No. 12/878,484, which is entitled “Terahertz Phased Array System,”filed on Sep. 9, 2010, and is hereby incorporated by reference for allpurposes. This IC 106 is then secured to the antenna packages 104 toallow each transceiver (for example) to communicate with an antennaincluded on the antenna package 104. Typically, the IC 106 has aprotective overcoat 406 that covers the IC 106, including metallizationlayer 404 and IC substrate 402 (as shown in FIGS. 4, 6, 8, 10, and 12),and stud bumps 302-1 to 302-20 (which can be seen in FIGS. 3, 4, 6, 8,10, and 12) are secured between the IC 106 and antenna package 104. Theantenna package 104 can then be secured to the PCB 102 (which istypically accomplished through bondpads being secured to one anotherthrough solder balls 108). By using this arrangement, cross-talk andloss can be reduced.

In FIG. 2, an example of the antenna package 104 can be seen in greaterdetail. As shown, the antenna package includes a phased array 204 thatis substantially surrounded by a high impedance surface (HIS). Anexample of such an HIS can be seen in U.S. patent application Ser. No.13/116,885, which is entitled “High Impedance Surface,” was filed on May26, 2011, and is hereby incorporated by reference for all purposes.Also, as shown, the phased array 204 includes antennas 206-1 to 206-4,but any number of antennas is possible. This phased array 204 can thenbe used to steer the beam of radiation.

In FIGS. 3-12, an example of the structure of each of the antennas 206-1to 206-4 (hereinafter labeled 206) can be seen. Antenna 206 can be (forexample) configured to operate at 160GHz. For this example operatingfrequency, the area occupied by the antenna (as shown in FIGS. 3-12) canbe 1020 μm×1020 μm, and the “core” of the antenna package 106 can be thepackage substrate 420 (which can, for example, have a thickness of about160 μm), and this package substrate 420 can also be formed of a polymerwith a high elastic modulus and low coefficient of thermal expansion andcan have. An example of which can be MCL-E679GT (which is available fromHitachi Chemical Co. America, Ltd.). Layers of differing materials canthen be formed on the package substrate 402.

On the underside of package substrate 402 (i.e., between the packagesubstrate 402 and IC 106) a dielectric layer 414 is formed. As shown inFIGS. 3 and 4, dielectric layer 414 (which can be referred to as abottom dielectric layer) can be formed, for example, of a polyimide witha thickness of about 10 μm. Stud bumps 302-1 to 302-20 extend throughthe dielectric layer and can be formed of, for example, gold with agold-nickel contact layer 410. As shown, stud bumps 302-5 to 302-20 arearranged along the perimeter of the antenna 206 (separated from oneanother, for example, by about 200 μm), while stud bumps 302-1 to 302-4are arranged symmetrically around the center of antenna 206 andseparated from one another (for example) by about 220 μm. Additionally,stud bumps 302-1 and 302-2 are typically coupled to differential feedterminals of a corresponding RF transceiver within IC 106, while studbumps 302-3 and 302-4 are typically coupled to ground.

A metallization layer 416 (as shown in FIGS. 5 and 6) is also formedbetween the dielectric layer 414 and package substrate 420, where thismetallization layer 416 can (for example) be formed of aluminum orcopper with a thickness of about 17 μm. As shown, metallization layer416 has a conductive region 504 (which can, for example, be about 180 μmwide) that surrounds window region 502 and has conductive regions 506-1to 506-4 within window region 502 that are generally aligned with studbumps 302-1 to 302-4, respectively. These conductive regions 506-1 to506-4 can (for example) be generally circular with a diameter of about100 μm. The package substrate 402 also includes vias 418-1 to 418-20(which are generally aligned with and in electrical contact withconductive region 504 and stud bumps 302-1 to 302-20). Typically, in themanufacture of the antenna package 104, the metallization layer 416 isinitially formed on the underside of the package substrate 420 and thedielectric layer 414 is formed over the metallization layer 416, andduring assembly of the IC 106 and antenna package 104, an underfilllayer 412 can also be formed between the IC 106 and dielectric layer 414(which can, for example, have a permittivity of about 3.2 C/V*m and aconductivity of 0.011 S/m). This underfill layer 412 can be film appliedprior to assembly or can be formed by injection of underfill compound.

In FIGS. 7 and 8, metallization layer 422 is shown. This metallizationlayer 422 (similar to metallization layer 416) has a conductive region604 that substantially surrounds a window region 602 (which the windowregion 602 can be substantially aligned with window region 502), andthis metallization layer 422 can (for example) be formed of aluminum orcopper with a thickness of about 17 μm. Within window region 602, thereare conductive regions 606-1 to 606-4 that are substantially alignedwith vias 418-1 to 418-4, respectively, and are in electrical contactwith conductive regions 506-1 to 506-4 through vias 418-1 to 418-4,respectively. Each of these conductive regions 606-1 to 606-4 can also(for example) be generally circular with a diameter of about 180 μm.

Turning to FIGS. 9 and 10, metallization layer 428 can be seen. Thismetallization layer 428 (which can, for example, be formed of aluminumor copper with a thickness of about 17 μm) has a conductive region 704(which can be about 180 μm wide) that substantially surrounds a windowregion 702 and has conductive regions 706-1 to 706-5 within windowregion 702. Separating metallization layers 422 and 428 is dielectriclayer 426 (which can, for example, be a polyimide film with a thicknessof about 20 μm) with vias 424-1 to 424-20 extending therethrough.Conductive regions 706-1 to 706-4 can also be (for example) generallycircular with a diameter of about 180 μm, which are aligned withconductive regions 606-1 to 606-4 and vias 424-1 to 424-4, respectively.Additionally, conductive region 706-5 (which can, for example, be about60 μm wide) extends between and is in electrical contact with conductiveregions 706-1 and 706-4 so as to form a connection between one feedterminal from an RF transceiver in IC 106 (i.e., through stud bump302-1) and ground (i.e., through stud bump 302-4).

In FIGS. 11 and 12, metallization layer 434 can be seen. As with theother metallization layers (i.e., 422), metallization layers 434 has aconductive region 804 (which can, for example be 180 μm wide and have athickness, for example of 17 m) that substantially surrounds a windowregion 802 and that is in electrical contact with conductive region 704through vias 430-5 to 430-20. Metallization layer 434 also includesconductive regions 806-1 to 806-4 (which can, for example, be generallycircular and be about 100 μm in diameter) that are generally alignedwith conductive regions 706-1 to 706-4, respectively, and in electricalcontact through vias 430-1 to 430-4, respectively. There is also aconductive region 806-5 that extends between and is in electricalcontact with conductive regions 806-2 and 806-3 so as to form aconnection between one feed terminal from an RF transceiver in IC 106(i.e., through stud bump 302-2) and ground (i.e., through stud bump302-3). Because of the orientation of conductive regions 806-5 and706-5, conductive region 806-5 overlaps conductive region 706-5 to forthe “cross loop.”

By using this structure to, for example, generate radiation at 160 GHz,the radiation pattern shown in FIG. 13 can be produced. As shown in thisexample, this is a wide beam with a directivity of 5.2 dBi, a gain of4.0 dBi, and an efficiency of 76%. Additionally, because of thearrangement of the system 100, radiation propagates away from PCB 102 sothat parasitic radiation and interference from PCB trances and bereduced, and the loop antenna (i.e., antenna 206) can allow for circularpolarization by varying the phase of the input signal. The “via wall”(which is generally formed by vias 418-5 to 418-20, 424-5 to 424-20, and430-5 to 430-20) also improves radiation efficiency by reducing surfacewaves. Moreover, metal layers in both the antenna package 104 and IC 106can be used to form reflectors and directors to increase antenna gain.

Having thus described the present invention by reference to certain ofits preferred embodiments, it is noted that the embodiments disclosedare illustrative rather than limiting in nature and that a wide range ofvariations, modifications, changes, and substitutions are contemplatedin the foregoing disclosure and, in some instances, some features of thepresent invention may be employed without a corresponding use of theother features. Accordingly, it is appropriate that the appended claimsbe construed broadly and in a manner consistent with the scope of theinvention.

1. An apparatus comprising: a substrate having a first terminal, asecond terminal, third terminal, and a fourth terminal; a firstmetallization layer disposed over the substrate, wherein the firstmetallization layer includes: a first window region; a first conductiveregion disposed over and in electrical contact with the first terminal,wherein the first conductive region is substantially circular, andwherein the first conductive region is located within the first windowregion; a second conductive region disposed over and in electricalcontact with the second terminal, wherein the second conductive regionis substantially circular, and wherein the first conductive region islocated within the first window region; a third conductive regiondisposed over and in electrical contact with the third terminal, whereinthe third conductive region is substantially circular, and wherein thethird conductive region is located within the first window region; and afourth conductive region disposed over and in electrical contact withthe fourth terminal, wherein the fourth conductive region issubstantially circular, and wherein the fourth conductive region islocated within the first window region; a second metallization layerdisposed over the first metallization layer, wherein the secondmetallization layer includes: a second window region that issubstantially aligned with the first window region; a fifth conductiveregion disposed over and in electrical contact with the first conductiveregion, wherein the fifth conductive region is substantially circular,and wherein the fifth conductive region is located within the secondwindow region; a sixth conductive region disposed over and in electricalcontact with the second conductive region, wherein the sixth conductiveregion is substantially circular, and wherein the sixth conductiveregion is located within the second window region; a seventh conductiveregion disposed over and in electrical contact with the third conductiveregion, wherein the seventh conductive region is substantially circular,and wherein the seventh conductive region is located within the secondwindow region; an eighth conductive region disposed over and inelectrical contact with the fourth conductive region, wherein the eighthconductive region is substantially circular, and wherein the fourthconductive region is located within the second window region; and aninth conductive region that extends between and is in electricalcontact with the fifth and eighth conductive regions; and a thirdmetallization layer disposed over the second metallization layer,wherein the third metallization layer includes: a third window regionthat is substantially aligned with the second window region; a tenthconductive region disposed over and in electrical contact with the fifthconductive region, wherein the tenth conductive region is substantiallycircular, and wherein the tenth conductive region is located within thethird window region; an eleventh conductive region disposed over and inelectrical contact with the sixth conductive region, wherein theeleventh conductive region is substantially circular, and wherein theeleventh conductive region is located within the third window region; atwelfth conductive region disposed over and in electrical contact withthe seventh conductive region, wherein the twelfth conductive region issubstantially circular, and wherein the twelfth conductive region islocated within the third window region; a thirteenth conductive regiondisposed over and in electrical contact with the eighth conductiveregion, wherein the thirteenth conductive region is substantiallycircular, and wherein the thirteenth conductive region is located thirdthe second window region; and a fourteenth conductive region thatextends between and is in electrical contact with the eleventh andtwelfth conductive regions, wherein the fourteenth region overlaps theninth region.
 2. The apparatus of claim 1, wherein the first, second,and third window regions are substantially rectangular.
 3. The apparatusof claim 2, wherein the apparatus further comprises: a first set ofvias, wherein each via from the first set of via extends between atleast one of the first and fifth conductive regions, the second andsixth conductive regions, the third and seventh conductive regions, andthe fourth and eighth conductive regions; and a second set of vias,wherein each via from the second set of via extends between at least oneof the tenth and fifth conductive regions, the eleventh and sixthconductive regions, the twelfth and seventh conductive regions, and thethirteenth and eighth conductive regions.
 4. The apparatus of claim 3,wherein the substrate further comprises a plurality of border terminals,and wherein the first metallization layer further comprises a fifteenthconductive region that substantially surrounds the first window regionand is in electrical contact with the boarder terminals, and wherein thesecond metallization layer further comprises a sixteenth conductiveregion that substantially surrounds the second window region and that isin electrical contact with the fifteenth conductive region, and whereinthe third metallization layer further comprises a seventeenth conductiveregion that substantially surrounds the third window region and that isin electrical contact with the sixteenth conductive region.
 5. Theapparatus of claim 4, wherein the apparatus further comprises: a thirdset of vias, wherein each via from the third set of vias extends betweenthe fifteenth and sixteenth conductive regions; and a fourth set ofvias, wherein each via from the fourth set of vias extends between thesixteenth and seventeenth conductive regions.
 6. The apparatus of claim5, wherein the first and second terminals are coupled to ground.
 7. Theapparatus of claim 6, wherein the first, second, third and fourthterminals are stud bumps.
 8. An apparatus comprising: an integratedcircuit (IC) having: radio frequency (RF) circuitry; a stud bump that iscoupled to the RF circuitry; a second stud bump that is coupled to theRF circuitry; a third stud bump that is coupled to the RF circuitry andthat is coupled to ground; a fourth stud bump that is coupled to the RFcircuitry and that is coupled to ground; and an antenna package having:a dielectric layer, wherein the first, second, third, and fourth studbumps extend through the dielectric layer; an underfill layer that isdisposed between the dielectric layer and the IC; a first metallizationlayer disposed over the substrate, wherein the first metallization layerincludes: a first window region; a first conductive region disposed overand in electrical contact with the first stud bump, wherein the firstconductive region is substantially circular, and wherein the firstconductive region is located within the first window region; a secondconductive region disposed over and in electrical contact with thesecond stud bump, wherein the second conductive region is substantiallycircular, and wherein the first conductive region is located within thefirst window region; a third conductive region disposed over and inelectrical contact with the third stud bump, wherein the thirdconductive region is substantially circular, and wherein the thirdconductive region is located within the first window region; and afourth conductive region disposed over and in electrical contact withthe fourth stud bump, wherein the fourth conductive region issubstantially circular, and wherein the fourth conductive region islocated within the first window region; a package substrate; a secondmetallization layer disposed over the package substrate, wherein thefirst metallization layer includes: a second window region that issubstantially aligned with the first window region; a fifth conductiveregion disposed over and in electrical contact with the first conductiveregion, wherein the fifth conductive region is substantially circular,and wherein the fifth conductive region is located within the secondwindow region; a sixth conductive region disposed over and in electricalcontact with the second conductive region, wherein the sixth conductiveregion is substantially circular, and wherein the sixth conductiveregion is located within the second window region; a seventh conductiveregion disposed over and in electrical contact with the third conductiveregion, wherein the seventh conductive region is substantially circular,and wherein the seventh conductive region is located within the secondwindow region; and an eighth conductive region disposed over and inelectrical contact with the fourth conductive region, wherein the eighthconductive region is substantially circular, and wherein the eighthconductive region is located within the second window region; a set ofvias, wherein each via from the set of via extends through the packagesubstrate between at least one of the first and fifth conductiveregions, the second and sixth conductive regions, the third and seventhconductive regions, and the fourth and eighth conductive regions; asecond metallization layer disposed over the first metallization layer,wherein the second metallization layer includes: a third window regionthat is substantially aligned with the second window region; a ninthconductive region disposed over and in electrical contact with the fifthconductive region, wherein the ninth conductive region is substantiallycircular, and wherein the ninth conductive region is located within thethird window region; a tenth conductive region disposed over and inelectrical contact with the sixth conductive region, wherein the tenthconductive region is substantially circular, and wherein the tenthconductive region is located within the third window region; an eleventhconductive region disposed over and in electrical contact with theseventh conductive region, wherein the eleventh conductive region issubstantially circular, and wherein the eleventh conductive region islocated within the third window region; a twelfth conductive regiondisposed over and in electrical contact with the eighth conductiveregion, wherein the twelfth conductive region is substantially circular,and wherein the twelfth conductive region is located within the thirdwindow region; and a thirteenth conductive region that extends betweenand is in electrical contact with the ninth and twelfth conductiveregions; and a third metallization layer disposed over the secondmetallization layer, wherein the third metallization layer includes: afourth window region that is substantially aligned with the third windowregion; a fourteenth conductive region disposed over and in electricalcontact with the ninth conductive region, wherein the fourteenthconductive region is substantially circular, and wherein the fourteenthconductive region is located within the fourth window region; afifteenth conductive region disposed over and in electrical contact withthe tenth conductive region, wherein the fifteenth conductive region issubstantially circular, and wherein the fifteenth conductive region islocated within the fourth window region; a sixteenth conductive regiondisposed over and in electrical contact with the eleventh conductiveregion, wherein the sixteenth conductive region is substantiallycircular, and wherein the sixteenth conductive region is located withinthe fourth window region; a seventeenth conductive region disposed overand in electrical contact with the twelfth conductive region, whereinthe sixteenth conductive region is substantially circular, and whereinthe sixteenth conductive region is located third the fourth windowregion; and an eighteenth conductive region that extends between and isin electrical contact with the fifteenth and sixteenth conductiveregions, wherein the eighteenth region overlaps the thirteenth region.9. The apparatus of claim 8, wherein the first, second, third, andfourth window regions are substantially rectangular.
 10. The apparatusof claim 9, wherein the set of via further comprises a first set ofvias, and wherein the antenna package further comprises: a second set ofvias, wherein each via from the second set of via extends between atleast one of the ninth and fifth conductive regions, the tenth and sixthconductive regions, the eleventh and seventh conductive regions, and thetwelfth and eighth conductive regions; and a third set of vias, whereineach via from the third set of via extends between at least one of theninth and fourteenth conductive regions, the tenth and fifteenthconductive regions, the eleventh and sixteenth conductive regions, andthe twelfth and seventeenth conductive regions.
 11. The apparatus ofclaim 10, wherein the IC further comprises a plurality of border studbumps, and wherein the first metallization layer further comprises anineteenth conductive region that substantially surrounds the firstwindow region and is in electrical contact with the boarder stud bumps,and wherein the second metallization layer further comprises a twentiethconductive region that substantially surrounds the second window regionand that is in electrical contact with the nineteenth conductive region,and wherein the third metallization layer further comprises atwenty-first conductive region that substantially surrounds the thirdwindow region and that is in electrical contact with the twentiethconductive region.
 12. The apparatus of claim 11, wherein the antennapackage further comprises: a fourth set of vias, wherein each via fromthe fourth set of vias extends between the nineteenth and twentiethconductive regions; and a fifth set of vias, wherein each via from thefifth set of vias extends between the twentieth and twenty-firstconductive regions.
 13. The apparatus of claim 12, wherein the first,second, third, and fourth metallization layers are formed of copper oraluminum, and wherein the dielectric layer is formed of polyimide, andwherein each of the first, second, third, fourth, and border stud bumpsare formed of gold with a gold-nickel plating.
 14. An apparatuscomprising: an integrated circuit (IC) having: a plurality of RFtransceivers; a plurality of sets of stub bumps, wherein each set ofstud bump is associated with at least one of the RF transceivers, andwherein each set of stud bumps includes: a first stud bump that iscoupled to its associated RF transceiver; a second stud bump that iscoupled to its associated RF transceiver; a third stud bump that iscoupled to its associated RF transceiver and that is coupled to ground;and a fourth stud bump that is coupled to its associated RF transceiverand that is coupled to ground; an antenna package having: a dielectriclayer, wherein each stud bump from each set of the plurality of sets ofstud bumps extends through the dielectric layer; an underfill layer thatis disposed between the dielectric layer and the IC; a packagesubstrate; an array of antenna, wherein each antenna is associated withat least of the RF transceivers, and wherein each antenna includes: afirst metallization layer disposed over the substrate, wherein the firstmetallization layer includes: a first window region; a first conductiveregion disposed over and in electrical contact with its associated firststud bump, wherein the first conductive region is substantiallycircular, and wherein the first conductive region is located within thefirst window region; a second conductive region disposed over and inelectrical contact with its associated second stud bump, wherein thesecond conductive region is substantially circular, and wherein thefirst conductive region is located within the first window region; athird conductive region disposed over and in electrical contact with itsassociated third stud bump, wherein the third conductive region issubstantially circular, and wherein the third conductive region islocated within the first window region; and a fourth conductive regiondisposed over and in electrical contact with its associated fourth studbump, wherein the fourth conductive region is substantially circular,and wherein the fourth conductive region is located within the firstwindow region; a second metallization layer disposed over the packagesubstrate, wherein the first metallization layer includes: a secondwindow region that is substantially aligned with the first windowregion; a fifth conductive region disposed over and in electricalcontact with the first conductive region, wherein the fifth conductiveregion is substantially circular, and wherein the fifth conductiveregion is located within the second window region; a sixth conductiveregion disposed over and in electrical contact with the secondconductive region, wherein the sixth conductive region is substantiallycircular, and wherein the sixth conductive region is located within thesecond window region; a seventh conductive region disposed over and inelectrical contact with the third conductive region, wherein the seventhconductive region is substantially circular, and wherein the seventhconductive region is located within the second window region; and aneighth conductive region disposed over and in electrical contact withthe fourth conductive region, wherein the eighth conductive region issubstantially circular, and wherein the eighth conductive region islocated within the second window region; a set of vias, wherein each viafrom the set of via extends through the package substrate between atleast one of the first and fifth conductive regions, the second andsixth conductive regions, the third and seventh conductive regions, andthe fourth and eighth conductive regions; a second metallization layerdisposed over the first metallization layer, wherein the secondmetallization layer includes: a third window region that issubstantially aligned with the second window region; a ninth conductiveregion disposed over and in electrical contact with the fifth conductiveregion, wherein the ninth conductive region is substantially circular,and wherein the ninth conductive region is located within the thirdwindow region; a tenth conductive region disposed over and in electricalcontact with the sixth conductive region, wherein the tenth conductiveregion is substantially circular, and wherein the tenth conductiveregion is located within the third window region; an eleventh conductiveregion disposed over and in electrical contact with the seventhconductive region, wherein the eleventh conductive region issubstantially circular, and wherein the eleventh conductive region islocated within the third window region; a twelfth conductive regiondisposed over and in electrical contact with the eighth conductiveregion, wherein the twelfth conductive region is substantially circular,and wherein the twelfth conductive region is located within the thirdwindow region; and a thirteenth conductive region that extends betweenand is in electrical contact with the ninth and twelfth conductiveregions; and a third metallization layer disposed over the secondmetallization layer, wherein the third metallization layer includes: afourth window region that is substantially aligned with the third windowregion; a fourteenth conductive region disposed over and in electricalcontact with the ninth conductive region, wherein the fourteenthconductive region is substantially circular, and wherein the fourteenthconductive region is located within the fourth window region; afifteenth conductive region disposed over and in electrical contact withthe tenth conductive region, wherein the fifteenth conductive region issubstantially circular, and wherein the fifteenth conductive region islocated within the fourth window region; a sixteenth conductive regiondisposed over and in electrical contact with the eleventh conductiveregion, wherein the sixteenth conductive region is substantiallycircular, and wherein the sixteenth conductive region is located withinthe fourth window region; a seventeenth conductive region disposed overand in electrical contact with the twelfth conductive region, whereinthe sixteenth conductive region is substantially circular, and whereinthe sixteenth conductive region is located third the fourth windowregion; and an eighteenth conductive region that extends between and isin electrical contact with the fifteenth and sixteenth conductiveregions, wherein the eighteenth region overlaps the thirteenth region;and a high impedance surface (HIS) disposed on the substrate andsubstantially surrounding the array of antennas.
 15. The apparatus ofclaim 14, wherein the first, second, third, and fourth window regionsfor each antenna are substantially rectangular.
 16. The apparatus ofclaim 15, wherein the set of via further comprises a first set of vias,and wherein the antenna package further comprises: a second set of vias,wherein each via from the second set of via extends between at least oneof the ninth and fifth conductive regions, the tenth and sixthconductive regions, the eleventh and seventh conductive regions, and thetwelfth and eighth conductive regions; and a third set of vias, whereineach via from the third set of via extends between at least one of theninth and fourteenth conductive regions, the tenth and fifteenthconductive regions, the eleventh and sixteenth conductive regions, andthe twelfth and seventeenth conductive regions.
 17. The apparatus ofclaim 16, wherein the IC further comprises a plurality of border studbumps associated with each RF transceiver, and wherein the firstmetallization layer for each antenna further comprises a nineteenthconductive region that substantially surrounds the first window regionand is in electrical contact with the boarder stud bumps, and whereinthe second metallization layer for each antenna further comprises atwentieth conductive region that substantially surrounds the secondwindow region and that is in electrical contact with the nineteenthconductive region, and wherein the third metallization layer for eachantenna further comprises a twenty-first conductive region thatsubstantially surrounds the third window region and that is inelectrical contact with the twentieth conductive region.
 18. Theapparatus of claim 17, wherein the antenna package further comprises: afourth set of vias, wherein each via from the fourth set of vias extendsbetween the nineteenth and twentieth conductive regions; and a fifth setof vias, wherein each via from the fifth set of vias extends between thetwentieth and twenty-first conductive regions.
 19. The apparatus ofclaim 18, wherein the first, second, third, and fourth metallizationlayers for each antenna are formed of copper or aluminum, and whereinthe dielectric layer is formed of polyimide, and wherein each of thefirst, second, third, fourth, and border stud bumps are formed of goldwith a gold-nickel contact layer.